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    HEMT

    High electron mobility transistor (HEMT) is a class of compound semiconductor field-effect transistors (FETs) that utilize two materials with different bandgaps, typically comprising a wide-bandgap (e.g., AlGaAs) and a narrow-bandgap (e.g., GaAs) semiconductor to form a heterojunction, where a two-dimensional electron gas is generated at the junction interface that serves as a channel for charge carriers. The gate regulates the dimension of the electron gas through a Schottky diode, while the source and drain direct the flow of charge carriers. III-V compound semiconductors offer high speed, high power and stability of HEMT devices due to their excellent electron mobility, breakdown field strength and more readily available heterostructures.
    Category Introduction

    III-V compound semiconductor HEMTs, including enhancement-mode (E-mode) and depletion-mode (D-mode), hold an important position in both mature industrial products and emerging fields in integrated circuits due to their excellent performance and wide application prospects:

    1. 5G, satellite communications and next-generation wireless communications: The outstanding electron mobility (up to 13500 cm2 V-1 s-1), low noise figure and wide bandwidth (covering the 10 GHz to 1 THz range) characteristics of III-V compound semiconductor HEMT fully satisfies the needs of high-frequency, high-speed and low-noise electronics in the state-of-the-art 5G and next-generation wireless communication systems. It is the core device in equipment such as transmitters, receivers and transponders.

    2. RF integrated circuits: In addition to power amplification and signal conditioning in RF front-end modules in communication systems, III-V compound semiconductor HEMTs are widely used in low-noise amplifiers, switches, frequency multipliers, mixers and transmission amplifiers in RF integrated circuits.

    3. Radar system: III-V compound semiconductor HEMTs are ubiquitously used as power amplifiers, to enhance the detection range and accuracy via a stronger signal. It also serves as a low-noise amplifier in the receiver system to amplify weak signals and reduce noise interference. HEMTs are used in mixer and oscillator circuits for signal generation, modulation, demodulation and other processes.

    Zhuhai HuaXin Microelectronics offers 0.5 μm to 0.15 μm E-/D-mode HEMTs in standard and customized products.