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HBT

HBT

Heterojunction bipolar transistor (HBT) is developed from bipolar junction transistor (BJT), which is named after the use of semiconductor materials with different band structures in the emitter, base and collector regions. This type of structure facilitates energy level alignment at the heterojunction interface, giving rise to more efficient charge carrier transport between the emitter and base regions. Gallium arsenide (GaAs), indium phosphide (InP) and their derivative III-V compound semiconductor materials are one of the most prominent materials for HBT devices due to their direct bandgap structure, tunable bandgap and superior electron mobility.
Category Introduction

Due to their unique physical and chemical properties, HBTs based on III-V compound semiconductors has shown a wide range of application prospects in modern electronic communications, optoelectronic detection and processing of high-frequency signals.

1. 5G and next-generation wireless communications: III-V compound semiconductor HBTs’ operating frequency is significantly higher than that of traditional silicon-based semiconductors, and cover a broad range of frequency bands that span from 10 GHz to 1 THz. With excellent high-frequency performance and high-speed transmission capability, III-V HBTs are an important part of the state-of-the-art 4G, 5G, WiFi 6 and upcoming 6G and WiFi 7 wireless communication systems.

2. Microwave/mm-wave devices: III-V compound semiconductor HBTs offer high gain and high output power in the microwave/mm-wave bands, which can be utilized to create high-performance power amplifiers, mixers and oscillators in these bands, with unique applications in radar, satellite communications and other critical fields.

3. Optoelectronic devices: III-V HBTs can also be used in the fields of photodetection, optical amplifiers and optical modulators. Its high transmission speed and high sensitivity offer HBTs unique advantages in optical communication and optical sensing.

Zhuhai HuaXin Microelectronics, with its own design and growth of epitaxial structures, experienced team and advanced III-V semiconductor integrated circuits (ICs) manufacturing technologies, offers both standardized and customized HBT products.