Zhuhai Huaxin Microelectronics has aimed to become a Leading Brand in the Semiconductor Field since its Inception
Established in 2023 and Belonging to Huaxin (Zhuhai) Semiconductor Co., Ltd., Zhuhai Huaxin Microelectronics is Located in Zhuhai High-Tech Zone's IC Industrial Park. Certified as a Pillar Project in Zhuhai High-Tech Zone and a Key Project in Guangdong Province, This Project Plans to Invest 3.387 Billion Yuan in the Construction of a GaAs RF Foundry Line with a Capacity of 15,000 Wafers Per Month. The Project, Covering 59.3 Mu of Land and Constructing 73,978 sq.m of Buildings, Was Fully Capped in January 2024. It Is Expected That the Cleanroom Will Be Completed and Equipment Installed by July 2024, with the First High-Power, High-Efficiency 6-inch GaAs RF Wafer Produced by the End of the Year. Customer Tape-out Services Will Be Available, and Mass Production Is Anticipated to Begin in the First Half of 2025.
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2023 Year
Founded in
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33.87 Billion Yuan
Investment Plan
We Are a Key Project in Zhuhai High-Tech Zone and Guangdong Province
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73,978 sq.m
Construction Area
Our Project Covers 59.3 Mu of Land with Specialized Production Facilities
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20 +
Business Scope
Covering Multiple Emerging Industries, Enabling Full Domestic Manufacturing
HBT
Heterojunction bipolar transistor (HBT) is developed from bipolar junction transistor (BJT), which is named after the use of semiconductor materials with different band structures in the emitter, base and collector regions. This type of structure facilitates energy level alignment at the heterojunction interface, giving rise to more efficient charge carrier transport between the emitter and base regions. Gallium arsenide (GaAs), indium phosphide (InP) and their derivative III-V compound semiconductor materials are one of the most prominent materials for HBT devices due to their direct bandgap structure, tunable bandgap and superior electron mobility.
HEMT
High electron mobility transistor (HEMT) is a class of compound semiconductor field-effect transistors (FETs) that utilize two materials with different bandgaps, typically comprising a wide-bandgap (e.g., AlGaAs) and a narrow-bandgap (e.g., GaAs) semiconductor to form a heterojunction, where a two-dimensional electron gas is generated at the junction interface that serves as a channel for charge carriers. The gate regulates the dimension of the electron gas through a Schottky diode, while the source and drain direct the flow of charge carriers. III-V compound semiconductors offer high speed, high power and stability of HEMT devices due to their excellent electron mobility, breakdown field strength and more readily available heterostructures.
Zhuhai Huaxin Microelectronics Always Adheres to Independent R&D,
Daring to Innovate Technologically while Continuously Refining Product Quality and Service Standards
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Professional R&D & Innovation
After Years of Focus on ICs and Chips, We Have a Mature and Professional R&D Team Pioneering in Innovation and Optimization!
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Scaled Production & Operations
Large-scale Operations and Finished Product Processing Significantly Reduce Costs, Offering Customers High-quality at Affordable Prices.
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Advanced Technology R&D
Always Viewing Technological Innovation as the Lifeblood of the Enterprise, Huaxin Continuously Drives Industry Advancement.
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Systematic Post-sales Support
Service Indicators Approach International Standards, Boosting Service Quality and Customer Satisfaction.
2023年01月
珠海华芯微电子有限公司于广东省珠海市香洲区XX大厦1楼1007室正式挂牌成立。
2023年02月
珠海华芯微电子有限公司于广东省珠海市香洲区XX大厦1楼1007室正式挂牌成立。
2023年03月
珠海华芯微电子有限公司于广东省珠海市香洲区XX大厦1楼1007室正式挂牌成立。
2023年04月
珠海华芯微电子有限公司于广东省珠海市香洲区XX大厦1楼1007室正式挂牌成立。
2023年05月
珠海华芯微电子有限公司于广东省珠海市香洲区XX大厦1楼1007室正式挂牌成立。
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